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Research Frontiers in Gallium Nitride HEMT High-Frequency Power Design

Development of GaN high-electron-mobility transistors operating at millimeter-wave frequencies for 5G and satellite communications.

Polarization Engineering in GaN Heterostructures
Thermal Management at the GaN-Substrate Interface
Inverse Piezoelectric Effects in High-Power Switching
Trap-Assisted Degradation in GaN HEMTs
Terahertz Performance Limits in AlGaN Barriers
Current Collapse and Surface State Dynamics
Phonon Scattering in Extreme Field Regimes
Gate Reliability and Dielectric Breakdown Mechanisms
Electron Transport in Ultra-Wide Bandgap Stacks
Switching Speed Optimization Beyond Dynamic Threshold

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