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Research Frontiers in Wide Bandgap Semiconductor Power Devices

Development of GaN and SiC-based power electronic devices for high-voltage, high-frequency switching applications in renewable energy and electric vehicle systems.

Thermal Runaway Mitigation in High-Density Power Modules
Dynamic On-State Resistance Degradation Under Switching Stress
Defect-Induced Leakage at GaN-Dielectric Heterointerfaces
Reliability of Paralleled Wide Bandgap Devices in Extreme Environments
Switching Speed Limitations from Charge Trapping Phenomena
Electrothermal Instability in Next-Generation Power Converters
Gate Oxide Breakdown Mechanisms in Ultra-High Voltage Devices
Inverse Piezoelectric Effects in Stressed SiC Structures
Fermi Level Pinning and Contact Engineering Optimization
Electromagnetic Coupling in Ultra-Fast Power Device Arrays

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